High-Efficiency Push–Pull Power Amplifier Integrated with Quasi-Yagi Antenna
نویسنده
چکیده
This paper presents a -band push–pull power amplifier integrated with a modified uniplanar quasi-Yagi antenna. In this circuit, corrugation is added to the truncated ground plane of the antenna so that it can be used for both out-of-phase power combining and second harmonic tuning. By using the active integrated antenna concept, this novel circuit eliminates the usage of an ordinary 180 hybrid at the power-amplifier output stage, therefore eliminating the losses associated with the hybrid, resulting in a compact and high-efficiency power-amplifier design with intrinsic second harmonic suppression. At an operating frequency of 4.15 GHz, a maximum measured power-added efficiency (PAE) of 60.9% at an output power of 28.2 dBm has been achieved. The measured PAE is above 50% over a 260-MHz bandwidth. Additionally, the second harmonic radiation is found to be 30 dB below the fundamental in both and -planes. When the circuit is subjected to a two-tone test, the measured third-order intercept point is 37 dBm, about 10 dB above the 1 dB point.
منابع مشابه
Integrated-Antenna Push–Pull Power Amplifiers
In this paper, the integrated-antenna concept is applied to push–pull power amplifiers (PA’s). In this approach, the antenna serves as an out-of-phase power combiner and tuned load for higher harmonics. This new architecture effectively has a near-zero loss output hybrid, and results in a high-efficiency PA. The first example is a narrow-band push–pull amplifier integrated with a dual-feed patc...
متن کاملRf Front-end Technologies Based on Active Integrated Antennas and Pbg
In this paper, we present novel design architectures that use either a periodic structure or an active integrated antenna (AIA) for harmonic tuning in transmitter front-end designs. These techniques promise to significantly improve the power amplifier efficiency, reduce losses and weight, as well as maintaining good linearity. We will illustrate these two concepts through several design example...
متن کاملAlGaN/GaN HFET Power Amplifier Integrated With Microstrip Antenna for RF Front-End Applications
In this paper, a high-efficiency and compact AlGaN/GaN heterojunction field-effect transistor (HFET) power amplifier integrated with a microstrip antenna at 7.25 GHz is presented for RF front-end circuit applications. A microstrip circular sector antenna is employed as both a radiator and frequency-dependent output load. Higher order harmonics from the HFET in nonlinear operation are reactively...
متن کاملA fully integrated 5 . 3 GHz , 2 . 4 V , 0 . 3 W SiGe - Bipolar Power Amplifier with 50 L ? output
@iR. ..... ........... VCCD PE ....... ........ Q ........... vcc GND ............ ........... ......... A radio frequency power amplijier for 4.8-5.7GHz has been realized in a 0.25 pm SiGe-bipolar technology. The balanced 2-stage push-pull power amplger uses two onchip transformers as input-balun and for interstage matching. Further it uses three coils for the integrated LC-output balun and th...
متن کاملRecent Developments in RF Front Ends Based Upon Active Antenna Concepts
In this paper several developments in RF front end technology based upon the active antenna concept are presented. RF front ends utilizing active antenna concepts have shown improvements in such areas as power added efficiency, compactness, low noise figure, and increased func-tionality. These improvements are illustrated in this paper with a Class F transmitter with integrated circular patch a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2001